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LPE Growth of Mixed Composition HI-V “Virtual Substrates” for MID-Infrared Optoelectronic Devices

Published online by Cambridge University Press:  10 February 2011

Y. Mao  and
A. Krier
Y. Mao
Affiliation:
Advanced Materials & Photonics Group, School of Physics and Chemistry, Lancaster University, Lancaster LAI 4YB, UK.
A. Krier
Affiliation:
Advanced Materials & Photonics Group, School of Physics and Chemistry, Lancaster University, Lancaster LAI 4YB, UK.
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Abstract

Liquid phase epitaxy can be effectively used to grow a thick graded ternary or quaternary buffer layer to provide a “virtual substrate” for subsequent device epitaxy. Grading characteristics of InGaAs, InAsSb and InAsSbP epitaxial layers grown by LPE are discussed. The effects of the principal LPE growth parameters on epiiayer thickness, surface morphology and composition, lattice-mismatch and photoluminescence efficiency were investigated and are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 49
Copyright
Copyright © Materials Research Society 1997

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References

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