Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-18T13:18:35.790Z Has data issue: false hasContentIssue false

Lutetium Oxide Coatings by PVD

Published online by Cambridge University Press:  01 February 2011

Stephen G Topping
Affiliation:
stopping@bu.edu, Boston University, Department of Manufacturing Engineering, 15 St. Mary's Street, Boston, MA, 02215, United States
C H Park
Affiliation:
chulho@bu.edu, Boston University, Department of Manufacturing Engineering, 15 St. Mary's Street, Boston, MA, 02215, United States
S K Rangan
Affiliation:
sridsudi@gmail.com, Boston University, Department of Manufacturing Engineering, 15 St. Mary's Street, Boston, MA, 02215, United States
V K Sarin
Affiliation:
sarin@bu.edu, Boston University, Department of Manufacturing Engineering, 15 St. Mary's Street, Boston, MA, 02215, United States
Get access

Abstract

Due to its high density and cubic structure, Lutetium oxide (Lu2O3) has been extensively researched for scintillating applications. Present manufacturing methods, such as hot pressing and sintering, do not provide adequate resolution due to light scattering of polycrystalline materials. Vapor deposition has been investigated as an alternative manufacturing method. Lutetium oxide transparent optical coatings by magnetron sputtering offer a means of tailoring the coating for optimum scintillation and resolution. Low crystallization in the sputtering process adversely affects transparency and scintillation, and is critical in growing stress free, thick coatings. The effect of process parameters on the crystallization is being investigated via x-ray diffraction (XRD), scanning electron microscopy (SEM) and emission spectroscopy and will be presented and discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zych, E., J. Phys. Condens. Matter 14, 5637 (2002).10.1088/0953-8984/14/22/315Google Scholar
2. Shestakova, I., Gaysinskiy, V., Antal, J., Bobek, L. and Nagarkar, V.V., Nucl. Instr. and Meth. In Phys. Res. B 263, 234 (2007).Google Scholar
3. Igarashi, T., Ihara, M., Kusunoki, T. and Ohno, K., App. Phys. Let. 76 [12], (2000).Google Scholar
4. Trojan-Piezga, J., Zych, E., Hreniak, D. and Strek, W., J. of Alloys and Comp. 380,123 (2004).Google Scholar
5. Satoh, Y., Najafov, H., Ohshio, S., Saitoh, H., Advances in Tech. of Mat. And Mat. Processing, 17 [1], 4346 (2005).Google Scholar