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MBE Growth and Properties of Fe Films on Lattice-Matched InxGa1−xAs Films

Published online by Cambridge University Press:  26 February 2011

R. F. C. Farrow ,
S. S. P. Parkin ,
V. S. Speriosu ,
C. H. Wilts ,
R. B. Beyers ,
P. Pitner ,
J. M. Woodall ,
S. L. Wright ,
P. D. Kirchner  and
G. D. Pettit
R. F. C. Farrow
Affiliation:
IBM Almaden Research Center, San Jose, Ca. 95120.
S. S. P. Parkin
Affiliation:
IBM Almaden Research Center, San Jose, Ca. 95120.
V. S. Speriosu
Affiliation:
IBM Almaden Research Center, San Jose, Ca. 95120.
C. H. Wilts
Affiliation:
California Institute of Technology, Pasadena, Ca.91125.
R. B. Beyers
Affiliation:
IBM Almaden Research Center, San Jose, Ca. 95120.
P. Pitner
Affiliation:
Stanford Electronics Laboratory, Stanford University, Stanford, Ca. 94305.
J. M. Woodall
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598.
S. L. Wright
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598.
P. D. Kirchner
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598.
G. D. Pettit
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598.
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Abstract

.We report the growth and magnetic properties of epitaxial Fe films, prepared by MBE on films of GaAs and In0.2Ga0.8As, on GaAs (100) substrates. We find that the magnetic properties of the Fe films, which are in the thickness range 300-900Å have virtually no dependence on the nature of the buffer film between the GaAs substrate and the Fe film. In terms of FMR linewidth, 4πMs and anisotropy, the Fe films are of the highest quality yet reported. Values of exchange constant and surface anisotropies were derived from an analysis of spinwaves observed in the thickest films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 483
Copyright
Copyright © Materials Research Society 1988

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References

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