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Mechanical Stress as a Function of Temperature in Thin Aluminum Films and its Alloys

Published online by Cambridge University Press:  22 February 2011

Donald S. Gardner  and
Paul A. Flinn
Donald S. Gardner
Affiliation:
C.I.S., Stanford University, Stanford, Calif. 94305
Paul A. Flinn
Affiliation:
Intel Corporation and Dept. of M.S. & E., Stanford University, Stanford, Ca 94305
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Abstract

Aluminum alloys have virtually replaced aluminum for interconnections in VLSI because of their improved reliability. Mechanical stress is a problem of growing importance in these interconnections. Stress as a function of temperature was measured for thin aluminum films and several aluminum alloys and layered films consisting of silicon, copper, titanium, tungsten, tantalum, vanadium, and TiSi2. Solid-state reactions of the aluminum with the additives and with the ambient during thermal cycling will occur and depending on what compounds have formed and at what temperature, this will determine the morphology and reliability of the metallization. The measurement technique, based on determination of wafer curvature with a laser scanning device, directly measures the total film stress and reflectivity in situ during thermal cycling. Changes in stress were detected when film composition and structure varied and were correlated using x-ray diffraction with the formation of aluminides. Other phenomena that contribute to stress changes including elastic behavior, recrystallization, grain growth, plastic behavior, yield strength, and film hardening from precipitates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 69
Copyright
Copyright © Materials Research Society 1989

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References

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