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Metal/GaN Contacts Studied by Electron Spectroscopies

Published online by Cambridge University Press:  03 September 2012

J. Dumont ,
R. Caudano ,
R. Sporken ,
E. Monroy ,
E. Muñoz ,
B. Beaumont  and
P. Gibart
J. Dumont
Affiliation:
Facultés Universitaires Notre-Dame de la Paix, Laboratoire Interdisciplinaire de Spectroscopie Electronique, Namur, Belgium
R. Caudano
Affiliation:
Facultés Universitaires Notre-Dame de la Paix, Laboratoire Interdisciplinaire de Spectroscopie Electronique, Namur, Belgium
R. Sporken
Affiliation:
Facultés Universitaires Notre-Dame de la Paix, Laboratoire Interdisciplinaire de Spectroscopie Electronique, Namur, Belgium
E. Monroy
Affiliation:
Universidad Politecnica de Madrid, E.S.T.I., Ciudad Universitaria, Madrid, Spain
E. Muñoz
Affiliation:
Universidad Politecnica de Madrid, E.S.T.I., Ciudad Universitaria, Madrid, Spain
B. Beaumont
Affiliation:
Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, CRHEA-CNRS, Valbonne, France
P. Gibart
Affiliation:
Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, CRHEA-CNRS, Valbonne, France
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Abstract

Au/GaN and Cu/GaN Schottky contacts have been studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Clean and stoechiometric GaN samples were obtained using in situ hydrogen plasma treatment and Ga deposition. The growth of Cu and Au follows Stranski-Krastanov and Frank van der Merwe modes respectively. The interfaces are sharp and non-reactive. Schottky barriers of 1.15eV for Au/GaN and 0.85eV for Cu/GaN were measured using XPS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.79
Copyright
Copyright © Materials Research Society 1999

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