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Metalorganic Molecular Beam Epitaxy of Magnesium Oxide on Silicon

Published online by Cambridge University Press:  10 February 2011

F. Niu ,
B.H. Hoerman  and
B.W. Wessels
F. Niu
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
B.H. Hoerman
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
B.W. Wessels
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
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Abstract

Epitaxial cubic MgO thin films were deposited on single crystal Si (001) substrates by metalorganic molecular beam epitaxy (MOMBE) using the solid precursor magnesium acetylacetonate as the source and an RF excited oxygen plasma as the oxidant. The growth process involved initial formation of an epitaxial β-SiC interlayer followed by direct deposition of a MgO overlayer. The film structure was characterized by X-ray diffraction as well as conventional and high-resolution transmission electron microscopy. Both the MgO overlayer and β-SiC interlayer had an epitaxial relationship such that MgO (001) (or SiC (001)) // Si (001) and MgO [110] (or SiC [110])// Si [110]. No evidence of an amorphous layer was observed at either the MgO/SiC or SiC/Si interface. Dielectric properties of the epitaxial MgO thin films on Si (001) were evaluated from capacitance-voltage (C-V) characteristic of metal-oxide-semiconductor (MOS) structures. The C-V measurements indicated an interface trap density at midgap as low as 1011 to 1012 cm−2 eV−1 and fixed oxide charge of the order of 1011/ cm2, respectively. These results indicate that epitaxial MgO deposited by MOMBE has potential as a gate insulator.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 619: Symposium L – Recent Developments in Oxide & Metal Epitaxy – Theory… , 2000 , 149
Copyright
Copyright © Materials Research Society 2000

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References

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