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Microcrystalline Silicon Films Produced by RF Magnetron Sputtering and the Effect of Diffrent Ambients on their Conductivity

Published online by Cambridge University Press:  21 February 2011

Ratnabali Berjee
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta : 700 032, India
A. K. Bandyopadhyay
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta : 700 032, India
S. N. Sharma
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta : 700 032, India
A. K. Patabyal
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta : 700 032, India
A.K. Barua
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta : 700 032, India
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Abstract

Results on characterisation of undoped, μc-Si:H films prepared by rf magnetron sputtering technique are presented. Highly conducting films (10−3 Δcm−1) were obtained at fairly low rf power density (l.2W/cm2). Critical parameters for obtaining microcrystalline phase were identified. The effect of humid ambient on film properties was looked into.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

1. Kruangam, D., Hamaki, K., Nonomara, S., Okamoto, H. and Hamakawa, Y., Technical Digest of the International Photovoltaic Science and Engineering Conf., Kobe, 1984,Japan Convention Services, Tokyo, P437 (1984).Google Scholar
2. Moustakas, T.D., Tetrahedrally-Bonded Amorphous Semiconductors, Edited by Adler, David and Fritzsche, Hellmut (Plenum Publishing Corp.), P93 (1985).Google Scholar
3. Saito, N., Sannomiya, H., Yamaguchi, T. and Tanaka, N., Appl. Phys. A35, 241 (1984).Google Scholar
4. Ishida, H., Noda, M. and Shimizu, H., Jpn.J.Appl.Phys., 22, L73 (1983).Google Scholar
5. Shirafuji, J., Matsui, H., Narikawa, A., Inuishi, Y. and Tanaka, N., Solid State Commun. 45, 577 (1983).Google Scholar
6. Landauer, R., J. Appl. Phys. 23, 779 (1952).Google Scholar
7. Ibach, H., Wagner, H. and Bruchmann, D., Solid State Commun. 42, 457 (1982).Google Scholar
8. Tanielian, M., Chatani, M., Fritzsche, H., Smid, V. and Persans, P.D., J. Non-Cryst. Solids, 35&36, 575 (1980).Google Scholar