The minority-carrier injection and series resistance effects on the electrical properties of a-Si:H Schottky barrier diodes are described. The conductivity modulation was observed, for the first time, in metal/HOMOCVD a-Si:H contacts. Its effect on capacitance-voltage characteristics are discussed. The minority-carrier injection ratio is estimated from current-voltage characteristics as a function of total forward current for different metals. It is shown that these effects cannot be neglected in the interpretation of the AC and DC measurements. The caution, therefore, must be taken when using a-Si:H diodes structures to obtain the fundamental physical parameters characterizing either the interface or bulk properties of amorphous semiconductors.
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