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Modeling and Characterization of the Hydrogenated Amorphous Silicon Metal Insulator Semiconductor Photosensors for Digital Radiography

Published online by Cambridge University Press:  01 February 2011

Nader Safavian ,
Y. Vygranenko ,
J. Chang ,
Kyung Ho Kim ,
J. Lai ,
D. Striakhilev ,
A. Nathan ,
G. Heiler ,
T. Tredwell  and
M. Fernandes
Nader Safavian
Affiliation:
safavian@venus.uwaterloo.ca, university of waterloo, ECE, 196 westmount rd. north, unit 203, waterloo, N2L3G5, Canada, 5197728641
Y. Vygranenko
Affiliation:
yuriy@venus.uwaterloo.ca, University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L3G5, Canada
J. Chang
Affiliation:
Jeff Chang , University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L3G5, Canada
Kyung Ho Kim
Affiliation:
khkim@venus.uwaterloo.ca, University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L3G5, Canada
J. Lai
Affiliation:
jlai@venus.uwaterloo.ca, University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L3G5, Canada
D. Striakhilev
Affiliation:
dastriak@venus.uwaterloo.ca, University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L3G5, Canada
A. Nathan
Affiliation:
anathan@venus.uwaterloo.ca, University College London, London Centre for Nanotechnology, London, WC1H OAH, United Kingdom
G. Heiler
Affiliation:
gregory.heiler@kodak.com, Eastman Kodak Company, Rochester, NY, 14650-23487, United States
T. Tredwell
Affiliation:
timothy.tredwell@kodak.com, Eastman Kodak Company, Rochester, NY, 14650-23487, United States
M. Fernandes
Affiliation:
yuriy@venus.uwaterloo.ca, ISEL, Electronics Telecommunication and Computer Dept., Lisboa, N/A, Portugal
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Abstract

Because of the inherent desired material and technological attributes such as low temperature deposition and high uniformity over large area, the amorphous silicon (a-Si:H) technology has been extended to digital X-ray diagnostic imaging applications. This paper reports on design, fabrication, and characterization of a MIS-type photosensor that is fully process-compatible with the active matrix a-Si:H TFT backplane. We discuss the device operating principles, along with measurement results of the transient dark current, linearity and spectral response.

Keywords

amorphousphotovoltaicradiation effects

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References

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