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Modeling of Polycrystalline Organic Thin-Film Transistor and Schottky Diode for the Design of Simple Functional Blocks

Published online by Cambridge University Press:  17 May 2011

M. Raja ,
D. Donaghy ,
R. Myers  and
W. Eccleston
M. Raja
Affiliation:
Organic Electronics Group, Department of Electrical Engineering & Electronics, University of Liverpool, Brownlow Hill, L69 3GJ. UK
D. Donaghy
Affiliation:
Organic Electronics Group, Department of Electrical Engineering & Electronics, University of Liverpool, Brownlow Hill, L69 3GJ. UK
R. Myers
Affiliation:
Organic Electronics Group, Department of Electrical Engineering & Electronics, University of Liverpool, Brownlow Hill, L69 3GJ. UK
W. Eccleston
Affiliation:
Organic Electronics Group, Department of Electrical Engineering & Electronics, University of Liverpool, Brownlow Hill, L69 3GJ. UK
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Abstract

We present analytical models for organic thin film transistors (OTFTs) and Schottky diodes based on polycrystalline semiconductors. The OTFT model is developed using a well-established approach previously developed for polysilicon, with slight modification for organics. The model predicts voltage and temperature dependencies on the various device and circuit parameters. A good agreement is obtained with experimental data of TIPS-based OTFTs. Essential parameters such as the characteristic temperature and Meyer-Neldel Energy extracted using the model with TIPS OTFTs data were in agreement with those obtained from Schottky diode measurements.

Keywords

organicdeviceselectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1359: Symposium NN – Electronic Organic and Inorganic Hybrid Nanomaterials—Synthesis, Device Physics and Their Applications , 2011 , mrss11-1359-nn02-08
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Eccleston, W., IEEE Trans. Elect. Dev. 53, 474 (2006).10.1109/TED.2005.864388Google Scholar
2. Vissenberg, M. C. J. M. and Matters, M., Phys. Rev. B. 57, 12964 (1998).10.1103/PhysRevB.57.12964Google Scholar
3. Meyer, W. and Neldel, H., Z. Tech. Phys., 18, 588 (1937).Google Scholar
4. Di Carlo, A. D., Piacenza, F., Bolognesi, A., Stadlober, B., and Maresch, H., App. Phys. Lett., 86, 263501 (2005).10.1063/1.1954901Google Scholar
5. Wang, S., Miyadera, T. and Minari, T., Appl. Phys. Lett., 93, 043311 (2008).Google Scholar
6. Verlaak, S., Arkhipov, V., and Heremans, P., Appl. Phys. Lett, 82, 745, 2003.Google Scholar
7. Chen, J. H., Tee, C. K. and Shtein, M., J. Appl. Phys., 103, 114513 (2008).Google Scholar
8. Bolognesi, A., Berliocchi, M., Manenti, M., Carlo, A. D., Lugli, P., Lmimouni, K., and Dufour, C., IEEE Trans. Elect. Dev. 51, 1997 (2004).Google Scholar
9. Bässler, H., Phys. Stat. Solidi B. 175, 15 (1993).10.1002/pssb.2221750102Google Scholar
10. Raja, M. and Eccleston, W., International Journal of High Speed Electronics and Systems (IJHSES) (in print).Google Scholar
11. Fadallah, M., Benzarti, W., Billiot, G., Eccleston, W. and Barclay, D., J. Appl. Phys. 99, 104504 (2006).10.1063/1.2197260Google Scholar
12. Brown, A. R., de Leeuw, D. M., Havinga, E. E. and Pomp, A., Synth. Met. 68, 65 (1994).10.1016/0379-6779(94)90148-1Google Scholar
13. Jarret, C. P., Friend, R. H., Brown, A. R. and de Leeuw, D. M., J. Appl. Phys. 77, 6289 (1995).10.1063/1.359096Google Scholar
14. Kotz, S., et al. , “The Laplace distribution and generalizations: a revisit with applications to communications, economics, engineering, and finance”, (Birkhäuser Boston, 2001) pp. 16–23.10.1007/978-1-4612-0173-1Google Scholar