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Monte Carlo Simulation of Dislocation-Nucleated Etching of Silicon {111} Surfaces

Published online by Cambridge University Press:  15 February 2011

Donald L. Woodraska ,
Jason Lacosse  and
John A. Jaszczak
Donald L. Woodraska
Affiliation:
Michigan Technological University, Department of Physics, 1400 Townsend Dr., Houghton, MI 49931-1295.
Jason Lacosse
Affiliation:
Michigan Technological University, Department of Physics, 1400 Townsend Dr., Houghton, MI 49931-1295.
John A. Jaszczak
Affiliation:
Michigan Technological University, Department of Physics, 1400 Townsend Dr., Houghton, MI 49931-1295.
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Abstract

We investigate equilibrium properties and thermal etching of the {111} surfaces of silicon, both with and without perpendicular intersecting dislocations, using Monte Carlo computer simulation. A modified solid-on-solid (SOS) approach is employed which realizes the correct diamond-cubic (DC) crystal structure. Nearest-neighbor interactions are incorporated to model the bonding, while the effects of a dislocation are incorporated by the addition of an energy field modeled as a core region and an elastic strained region. Dislocations are seen to nucleate the etching process and result in the formation of etch pits. Etch rates and etch-pit morphologies are investigated as a function of the chemical potential driving force for etching, the temperature, and the energy parameters used to model the dislocation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 209
Copyright
Copyright © Materials Research Society 1995

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References

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