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Morphology and Magneto-optical Properties of Amorphous AlN Films Doped with Nickel

Published online by Cambridge University Press:  14 January 2011

W. M. Jadwisienczak
Affiliation:
School of EECS, Ohio University, Athens, Ohio, U.S.A.
H. Tanaka
Affiliation:
School of EECS, Ohio University, Athens, Ohio, U.S.A.
G. Chen
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH, U.S.A.
M. Kordesch
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH, U.S.A.
A. Khan
Affiliation:
Department of Chemistry and Biochemistry, Ohio University, Athens, OH, U.S.A.
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Abstract

Structural and magneto-optical properties of Ni-doped amorphous AlN layers (a-AlN) deposited by radio frequency (rf) sputtering on Silicon (001) substrates were investigated. The as-grown material exhibits weak ferromagnetic behavior as evidenced by the magneto-optic Kerr effect (MOKE) measurement with Kerr rotation less than 100 μrad at room temperature regardless of the Ni fraction. The samples with a Ni concentration below 10 at.% show a weak but monotonically increasing MOKE signal with post-growth annealing temperature. A hundred-fold increase in the Kerr rotation value was observed for samples with Ni content exceeding 20 at.% after thermal annealing at 450°C in nitrogen; and the Kerr rotation value abruptly decreases above that temperature. The morphology of as-grown and annealed a-AlN:Ni films were characterized by small angle x-ray scattering and transmission electron microscopy. It was found that the as-deposited film contains nano-particles of different sizes with average diameters less than 30 nm. The size distribution of nano-particles in the thermally annealed a-AlN:Ni was studied as a function of annealing time and temperature. The results correlate well with those obtained from the MOKE measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Introduction to Amorphous Magnets by Kaneyoshi, T. (Nagoya University) (1992).Google Scholar
2. Fert, A., Rev. Mod. Phys. 80, 1517 (2008).Google Scholar
3. Das, G. P., Rao, B. K., Jena, P., and Kawazoe, Y., Comp. Mater. Sci. 36, 84 (2006).Google Scholar
4. Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications, ed. O’Donnell, K. P., Springer, 1st ed. (2010).Google Scholar
5. Pearton, S.J. et al. . Mater. Sci. Eng. R 40,137 (2003).Google Scholar
6. Jadwisienczak, W. M., Tanaka, H., Kordesch, M. E., Khan, A., Kaya, S. and Vuppuluri, R., Mater. Res. Soc. Symp. Proc. Vol. 1202, 1202-I05-06 (2010).Google Scholar
7. Baldan, A., J. Mat. Scien., 37 2379 (2002).Google Scholar
8. Ivanov, V., Aminov, T., Novotortsev, V., and Kalinnikov, V., Russ. Chem. Bull., Int. 53, 2357 (2004).Google Scholar
9. Zanatta, A., Khan, A. and Kordesch, M., J. Phys-Condens. Mat., 19, 436230 (2007).Google Scholar
10. Magnetic Nanoparticles, by Gubin, S.P., Whiley-CVH (2009)Google Scholar
11. Charge Transport in Disordered Solids with Applications in Electronics, ed. Baranovski Chichester, S., England; Hoboken, NJ, Wiley (2006).Google Scholar
12. Dev, P., Xue, Y., and Zhang, P., Phys. Rev. Lett. 100, 117204 (2008).Google Scholar
13. Jin, H., Dai, Y., Huang, B. and Whangbo, M. H., Appl. Phys. Lett. 94, 162505 (2009).Google Scholar
14. Dev, P. and Zhang, P., Phys. Rev. B. 81, 085207 (2010).Google Scholar
15. Claudio-Gonzalez, D., Husain, M. K., De Groot, C. H., Bordignon, G.. Fischbacher, T., Fangohr, H., J. Mag. Mag. Mater. 322, 1467 (2010).Google Scholar