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MOVPE Growth and Optical Characterization of GaPN Metastable Alloy Semiconductor

Published online by Cambridge University Press:  10 February 2011

K. Onabe
K. Onabe*
Affiliation:
Department of Applied Physics, The University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113 Japan, onabe@photonics.rcast.u-tokyo.ac.jp
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Abstract

The Gap1–x Nx, alloy semiconductor has been grown with the N concentration as high as 6.3% by inetalorganic vapor phase epitaxy (MOVPE) using 1,1-dimethylhydrazine (DMHy) as the N source. The growth characteristics show the key role of the non-equilibrium circumstances during the growth, where the N desorption from the surface limits the N incorporaton. The band-edge states have been studied using time-resolved PL and PL excitation spectroscopies. The PL takes place via the tail states below the absorption edge. The band edge, which shifts to lower energies with increasing N concentration, originates from the A-line energy (i.e. isolated N states) rather than the indirect-gap energy of GaP in the limit x = 0.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 23
Copyright
Copyright © Materials Research Society 1997

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References

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