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MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

Published online by Cambridge University Press:  03 September 2012

Jung Han ,
Jeffrey J. Figiel ,
Gary A. Petersen ,
Samuel M. Myers ,
Mary H. Crawford ,
Michael A. Banas  and
Sean J. Hearne
Jung Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Jeffrey J. Figiel
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Gary A. Petersen
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Samuel M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Mary H. Crawford
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Michael A. Banas
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Sean J. Hearne
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W6.2
Copyright
Copyright © Materials Research Society 1999

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