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Nanoscale Analysis of Defects in Semiconductors and Dielectrics by Means of Charge-transient Spectroscopy/microscopy

Published online by Cambridge University Press:  01 February 2011

Štefan Lányi ,
Vojtech Nádaždy ,
Miloslav Hruškovic  and
Ján Hribik
Štefan Lányi
Affiliation:
lanyi@savba.sk, Institute of Physics, SAS, Solid State Physics, Dubravska cesta 9, Bratislava, SK-845 11, Slovakia, +421259410525, +421254776085
Vojtech Nádaždy
Affiliation:
fyzinavo@savba.sk, Institute of Physics, SAS, Dúbravská cesta 9, Bratislava, SK-845 11, Slovakia
Miloslav Hruškovic
Affiliation:
miloslav.hruskovic@stuba.sk, Slovak University of Technology, Faculty od Electrical Engineering and Information Technology, Ilkovicova 3, Bratislava, SK-812 19, Slovakia
Ján Hribik
Affiliation:
jan.hribik@stuba.sk, Slovak University of Technology, Faculty od Electrical Engineering and Information Technology, Ilkovicova 3, Bratislava, SK-812 19, Slovakia
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Abstract

We discuss the possibilities of analysis of electrically active defects in semiconductors and dielectrics by means of Isothermal Capacitance-Transient Spectroscopy and Isothermal Charge-Transient Spectroscopy, applied on sub-micrometer scale. While the first of them utilizes the relaxation of the depletion layer, caused by emission of trapped charges and requires sufficient conductivity, the second directly integrates the transient current and can be applied also to low-conductivity materials like dielectrics.

We present some results obtained on pentacene thin films. By means of our charge-transient spectrometer we have achieved a resolution of hundreds of electrons but we believe it can be further improved approximately by one order of magnitude. In materials with relatively high defect concentration, using optimal shape of the probe, a resolution on the order of tens of manometers can be achieved. At low defect concentrations, e.g. in device quality silicon, a resolution on the hundred-nm level is expected.

Keywords

scanning probe microscopy (SPM)deep level transient spectroscopy (DLTS)defects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1025: Symposium B – Nanoscale Phenomena in Functional Materials by Scanning Probe Microscopy , 2007 , 1025-B13-05
Copyright
Copyright © Materials Research Society 2008

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