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Nanostructured Amorphous Silicon on Metal Electrodes: Electrical and Optical Properties

Published online by Cambridge University Press:  18 July 2013

George A. Hernandez
Affiliation:
Electrical and Computer Engineering Department, Auburn University, 200 Broun Hall, Auburn University, AL 36849, U.S.A.
Daniel Martinez
Affiliation:
Electrical and Computer Engineering Department, Auburn University, 200 Broun Hall, Auburn University, AL 36849, U.S.A.
Stephen Patenaude
Affiliation:
Electrical and Computer Engineering Department, Auburn University, 200 Broun Hall, Auburn University, AL 36849, U.S.A.
Michael C. Hamilton*
Affiliation:
Electrical and Computer Engineering Department, Auburn University, 200 Broun Hall, Auburn University, AL 36849, U.S.A.
*
*Corresponding Author E-mail: mch0021@auburn.edu, Tel: 334-844-1879
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Abstract

We present two distinct methods to nanostructure the surface of amorphous silicon to produce unique, nanoscale surface features. One method is a dry etch process that employs a modified Bosch1 process on an advanced silicon etcher to produce needle-like features of amorphous silicon. Likewise, we also investigated metal-assisted wet chemical etching2 as an alternative method to nanostructure the amorphous silicon to produce porous-like features. The resulting surface topography leads to an optically black appearance over patterned or large areas. This is a result of the interspacing between each needle and pore that leads to a high optical absorption. Thus, we designate it as black amorphous silicon (b-a-Si). We have deposited and formed regions of b-a-Si on variety of insulating films and metal electrodes, including chrome and titanium. In this study, we characterize the electrical and optical properties of as-deposited amorphous silicon and nanostructured amorphous silicon.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Rober Bosch, A.S., Larmer, Franz, U.S. Patent No. 5501893 (1996).Google Scholar
Chartier, C., Bastide, S., and Lévy-Clément, C., Electrochimica Acta 53, 5509 (2008).CrossRefGoogle Scholar
Snell, A.J., Mackenzie, K.D., Spear, W.E., LeComber, P.G., and Hughes, A.J., Applied Physics 24, 357 (1981).CrossRefGoogle Scholar
Nathan, A., Kumar, A., Sakariya, K., Servati, P., Sambandan, S., and Striakhilev, D., IEEE Journal of Solid-State Circuits 39, 1477 (2004).CrossRefGoogle Scholar
Carlson, D.E., IEEE Transactions on Electron Devices 24, 449 (1977).CrossRefGoogle Scholar
Cocorullo, G., Della Corte, F.G., Rendina, I., Minarini, C., Rubino, A., and Terzini, E., Optics Letters 21, 2002 (1996).CrossRefGoogle Scholar
Yoo, J.S., Parm, I.O., Gangopadhyay, U., Kim, K., Dhungel, S.K., Mangalaraj, D., and Yi, J., Solar Energy Materials and Solar Cells 90, 3085 (2006).CrossRefGoogle Scholar
Stubenrauch, M., Fischer, M., Kremin, C., Stoebenau, S., Albrecht, a, and Nagel, O., Journal of Micromechanics and Microengineering 16, S82 (2006).CrossRefGoogle Scholar
Jansen, H., de Boer, M., Legtenberg, R., and Elwenspoek, M., Journal of Micromechanics and Microengineering 5, 115 (1995).CrossRefGoogle Scholar
Hynes, A.M., Ashraf, H., Bhardwaj, J.K., Hopkins, J., Johnston, I., and Shepherd, J.N., Sensors and Actuators A: Physical 74, 13 (1999).CrossRefGoogle Scholar
Huang, Z., Geyer, N., Werner, P., de Boor, J., and Gösele, U., Advanced Materials (Deerfield Beach, Fla.) 23, 285 (2011).Google Scholar
Hung, Y.-J., Wu, K.-C., Lee, S.-L., and Pan, Y.-T., in IEEE Winter Topicals 2011 (IEEE, 2011), pp. 6162.CrossRefGoogle Scholar