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Nature of Charged Metastable Defects in Network Rebonding Model

Published online by Cambridge University Press:  01 February 2011

R. Biswas  and
B. C. Pan
R. Biswas
Affiliation:
Department of Physics and Astronomy, Microelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011
B. C. Pan
Affiliation:
Department of Physics and Astronomy, Microelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011 Department of Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
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Abstract

We recently developed an atomistic model of metastability of a-Si:H, where defect creation is driven by the breaking of weak silicon bonds. The kinetics of degradation in this model is simulated with coupled rate equations that show t1/3 kinetics of defect creation and saturation behavior similar to experiment. Saturated defect densities of neutral dangling bonds are accompanied by a much smaller density of negatively charged floating bonds and positively charged dangling bonds (D+). We propose a two-step annealing mechanism where the positively charged D+ dangling bonds are annealed at low temperature and the D0 at higher temperature -which accounts for hysteresis in mobility lifetime products.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A11.3
Copyright
Copyright © Materials Research Society 2002

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