Skip to main content

Non-Destructive Characterization of Porous Silicon Using X-Ray Reflectivity

  • E. Chason (a1), T.R. Guilinger (a1), M.J. Kelly (a1), T.J. Headley (a1) and A.J. Howard (a1)...

Understanding the evolution of porous silicon (PS) layers at the early stages of growth is important for determining the mechanism of PS film growth and controlling the film properties. We have used X-ray reflectivity (XRR) to determine the evolution of layer thickness and interfacial roughness during the growth of thin PS layers (< 200 nm) prepared by electrochemical anodization. The porous layer grows at a constant rate for films as thin as 15 nm indicating a very short incubation period during which the surface may be electropolished before the PS structure begins to form. Interface roughness measurements indicate that the top surface of the film remains relatively smooth during growth while the roughness of the PS/silicon interface increases only slightly with film thickness. The XRR results are compared with results obtained from the same films by cross-sectional transmission electron microscopy (XTEM), atomic force microscopy (AFM) and gravimetry.

Hide All
1 Tsao, S.S., IEEE Circuits Devices CD–3, 3 (1987).
2 Steiner, P., Richter, A. and Lang, W., J. Micromech. Microeng. 3, 32 (1993).
3 Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).
4 Guilinger, T.R., Kelly, M.J. and Stevenson, J.O., Proc. of the First Int'l. Symposium on Electrochemical Microfabrication, edited by Datta, M., Sheppard, K. and Snyder, D., The Electrochemical Society, vol. 92–3, 1992.
5 Als-Nielsen, J. in Structure and Dynamics of Surfaces, edited by Schommers, W. and von Blanckenhagen, P. (Springer, Berlin, 1986), Chap. 5, p. 181.
6 Underwood, J.H. and Barbee, T.W., Appl. Opt. 20, 3027 (1981).
7 Chason, E., Mayer, T.M., Payne, A. and Wu, D.T., Appl. Phys. Lett. 60, 2353 (1992).; E. Chason and D.T. Warwick, Mat. Res. Symp. Proc. Vol 208, 351 (1991).
8 Parratt, L.G., Phys. Rev. 95, 359 (1954).
9 Hu, S.M. and Kerr, D.R., J. Electrochem. Soc. 114, 414 (1967).
10 Guilinger, T.R. and Kelly, M.J., unpublished result.
11 Smith, R.L. and Collins, S.D., J. Appl. Phys. 71, R1 (1992).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed