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Nonvolatile Memory Characteristics of Nanocrystalline Molybdenum Oxide Embedded High-k Film - Device Performance and Light Wavelength Effects

Published online by Cambridge University Press:  25 May 2012

Yue Kuo ,
Xi Liu ,
Chia-Han Yang  and
Chi-Chou Lin
Yue Kuo
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.
Xi Liu
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A. Department Department of Industrial and Systems Engineering, Ohio University, Athens, OH 45701
Chia-Han Yang
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A. Department of Industrial and Information Engineering, University of Tennessee, Knoxville, TN 37996, U.S.A.
Chi-Chou Lin
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.
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Abstract

The nanocrystalline molybdenum oxide embedded Zr-doped HfO2 high-k nonvolatile memory device has been fabricated using the one pumpdown sputtering process and a rapid thermal annealing step. The majority embedded molybdenum existed in the MoO3 nanocrystal form but a small amount of metallic molybdenum was also detected. The memory function of this device was based on the hole trapping-and-detrapping mechanism. The embedded nanocrystals retained charges after the breakdown of the high-k stack. The charge storage capacity was influenced by light exposure, especially the wavelength. The silicon/high-k interface was also affected by the exposed light. This study provided an insight of the function of the embedded nanocrystals and the light effects on the device.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e01-10
Copyright
Copyright © Materials Research Society 2012

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References

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