The extendability of conventional subtractive lithographic processing using spin-coated polymeric single layer resists (SLR) faces many challenges as feature sizes in microelectronics push below 100 nm. In addition, the opacity of the polymeric materials traditionally used as SLR resins to future exposure sources presents new challenges as the radiation penetration depth decreases (e.g. 157 nm, EUVL, low keV e-beam). One solution to these problems is the use of surface imaging materials and processes. In such surface imaging methods, exposure in only a thin surface layer is used to create a pattern in a substantially thicker etch barrier layer. Conventional surface imaging approaches have mainly focused on silylation techniques which have experienced a variety of problems. This paper presents an update on two novel surface imaging methods under investigation: (1) surface monolayer initiated polymerization (SMIP) and (2) organometallic-organic bilayer resists.
The SMIP process involves using a monolayer that contains a polymerization initiator functionality. Exposure of the monolayer to radiation can deactivate the initiators in selected areas and the remaining initiators can subsequently be used to directly grow patterned polymer structures. This process allows complete decoupling of the imaging properties of the monolayer from the etch properties of the polymer etch barrier. In essence, the polymerization process is used to amplify the pattern initially formed in the monolayer. Recent results are presented that demonstrate the use of x-ray photoelectron spectroscopy in conjunction with dose array experiments to analyze the sensitivity of the initiators used for this process.
The other novel surface imaging method presented in this work uses organometallic-organic bilayers. In these systems, thin films of radiation sensitive organometallic precursors are used as an imaging layer in conjunction with thick organic etch barrier layers. Upon exposure, the organometallic precursor film is selectively converted to metal oxide. After exposure, the unexposed regions of the film can be developed away. Subsequent dry pattern transfer in an oxygen plasma can be used to transfer the pattern defined in the thin oxide layer through the organic etch barrier layer. Organometallic precursor films with sensitivities on the order of 70 μC/cm2 are demonstrated which result in oxide films that possess an etch selectivity of 100:1 with respect to novolac in oxygen plasmas. 500 nm line-space patterns are demonstrated as a first lithographic imaging proof-of-concept.
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