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The Nucleation and Epitaxial Growth of Au and Ag on Thin Silicon Studied With a Scanning Transmission Electron Microscope

Published online by Cambridge University Press:  25 February 2011

Peirong Xu ,
Peter Miller  and
John Silcox
Peirong Xu
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
Peter Miller
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
John Silcox
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
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Abstract

An UHV Scanning Transmission Electron Microscope (STEM) has been used to study the nucleation and epitaxial growth of Au and Ag deposited at room temperature on H-passivated thin silicon (111) and (100) substrates. Direct observations of the initial stages of overlayer growth were made using bright field (BF) and annular dark field (ADF) imaging modes. Gold was found to grow on silicon in a quasi-continuous layer mode, while 3D island growth with density as high as 4×1012/cm2 was observed in Ag/Si systems. Electron diffraction studies reveal a good epitaxial relationship for Ag films grown both on silicon (111) and (100) substrates. Diffraction also indicates that Au (111) grows on the silicon (111) surface but the grains may be azimuthally rotated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 19
Copyright
Copyright © Materials Research Society 1991

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References

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