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The occupancy of the threading dislocation lines within n-type gallium nitride: Recent progress

Published online by Cambridge University Press:  13 April 2012

Erfan Baghani  and
Stephen K. O’Leary
Erfan Baghani
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
Stephen K. O’Leary
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
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Abstract

Within the framework of a grand partition function formalism, we examine the occupancy of the dangling bond dislocation defect sites and the VGa-ON dislocation defect sites within uncompensated n-type gallium nitride. The sensitivity of these results to variations in the unoccupied dislocation defect energy level is examined. We find that the VGa-ON dislocation defect sites’ greater capacity to store charge plays a large role in influencing the results, i.e., greater free electron and bulk donor concentrations are required in order to fully saturate the threading dislocation lines with charge.

Keywords

defectsIII-Vsemiconducting
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g07-07
Copyright
Copyright © Materials Research Society 2012

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