Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-23T10:18:49.574Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical activation of Si nanowires using Er-doped sol-gel derived silica

Published online by Cambridge University Press:  01 February 2011

Kiseok Suh ,
Oun-Ho Park ,
Byeong-Soo Bae ,
Jung-Chul Lee ,
Heon-Jin Choi  and
Jung H. Shin
Kiseok Suh
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373–1, Guseong-dong, Yuseong-gu, Daejeon, Korea
Oun-Ho Park
Affiliation:
Department of Materials Science and Engineering, KAIST, 373–1 Guseong-dong, Yuseong-gu, Daejeon, Korea
Byeong-Soo Bae
Affiliation:
Department of Materials Science and Engineering, KAIST, 373–1 Guseong-dong, Yuseong-gu, Daejeon, Korea
Jung-Chul Lee
Affiliation:
Materials science and Technology Division, Korea Institute of Science and Technology (KIST), P.O. Box 131, Cheongryang, Seoul 130–650, Korea
Heon-Jin Choi
Affiliation:
Department of Ceramics, Yonsei University, Seoul 120–749, Korea
Jung H. Shin
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373–1, Guseong-dong, Yuseong-gu, Daejeon, Korea
Get access

Abstract

Optical activation of Si nanowires (Si-NWs) using sol-gel derived Er-doped silica is investigated. Si-NWs of about 100 nm diameter were grown on Si substrates by the vapor-liquid-solid method using Au catalysts and H2 diluted SiCl4. Afterwards, Er-doped silica sol-gel solution was spin-coated, and annealed at 950 °C in flowing N2/O2 environment. Such Er-doped silica/Si-NWs nanocomposite is found to combine the advantages of crystalline Si and silica to simultaneously achieve both high carrier-mediated excitation efficiency and high Er3+ luminescence efficiency while at the same time providing high areal density of Er3+ and easy current injection, indicating the possibility of developing sol-gel activated Si-NWs as a new material platform for Si-based photonics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F10.5
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See, for example, Towards the First Silicon Laser, NATO Science Series II, 93 (2003)Google Scholar
2. Ennen, H., Schneider, J., Pomrenke, G., and Axmann, A., Appl. Phys. Lett. 43, 943 (1983)Google Scholar
3. Palm, J., Gan, F., Zheng, B., Michel, J., and Kimerling, L. C., Phys. Rev. B 54, 17603 (1996)Google Scholar
4. Shin, J. H., Kim, M-J., Seo, S-Y., and Lee, C., Appl. Phys. Lett. 72, 1092 (1998)Google Scholar
5. Han, H-S., Seo, S-Y., Shin, J. H., and Park, N., Appl. Phys. Lett. 81, 3720 (2002)Google Scholar
6. Franzó, G., Irrera, A., Moreira, E. C., Miritello, M., Iacona, F., Sanfilippo, D., Di Stefano, G., Fallica, P. G., and Priolo, F., Appl. Phys. A 74, 1 (2002)Google Scholar
7. Cui, Y., and Lieber, C. M., Science 291, 851 (2001)Google Scholar
8. Wang, Z., and Coffer, J. L., Nano Lett. 2, 1303 (2002)Google Scholar
9. Jhe, J-H., Shin, J. H., Kim, K. J, and Moon, D. W., Appl. Phys. Lett. 82, 4489 (2003)Google Scholar
10. Wagner, R. S., and Ellis, W. C., Appl. Phys. Lett. 4, 89 (1964)Google Scholar
11. Slooff, L. H., de Dood, M. J. A., van Blaaderen, A., and Polman, A., J. Non-crystalline Solids 296, 158 (2001)Google Scholar
12. Kimura, T., Isshiki, H., Ide, S., Shimizu, T., and Ishida, T., Appl. Phys. 93, 2595 (2003)Google Scholar
13. Stepikhova, M., Jantsch, W., Kocher, G., Palmetshofer, L., Shoisswohl, M., and Von Bardeleben, H. J., Appl. Phys. Lett. 71, 2975 (1997)Google Scholar