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Optical Characterization of Europium-Doped Calcium Fluoride Thin Films Grown on Silicon by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

X.M. Fang ,
W.K. Liu ,
W. Shan ,
T. Chatterjee ,
P.J. Mccann ,
M.B. Santos  and
J.J. Song
X.M. Fang
Affiliation:
School of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK 73019
W.K. Liu
Affiliation:
Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK 73019
W. Shan
Affiliation:
Department of Physics and Center for Laser Research, Oklahoma State University, Stillwater, OK 74078
T. Chatterjee
Affiliation:
School of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK 73019
P.J. Mccann
Affiliation:
School of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK 73019
M.B. Santos
Affiliation:
Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK 73019
J.J. Song
Affiliation:
Department of Physics and Center for Laser Research, Oklahoma State University, Stillwater, OK 74078
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Abstract

Photoluminescence measurements have been made on Eu-doped CaF2 thin films grown on Si(100) substrates. The dependence of the integrated intensity of both the zero-phonon line and the vibronic sideband on temperature and Eu concentration has been studied in the range of 10 – 300 K and 0.14 – 7.48 at. %, respectively. An anti-Stokes feature is visible in the emission spectra at 75 K, indicating a significant occupation of the excited vibrational states of Eu2+ by phonons before the transition at temperatures above 75 K. The integrated intensity of the vibronic sideband increases slightly as temperature increases. The solubility of Eu in CaF2 thin films grown on Si(100) is found to be somewhere around 4.05 at. % as confirmed by the increase of the line width of x-ray rocking curves and the decrease in the integrated intensity of the zero-phonon line with Eu concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 429
Copyright
Copyright © Materials Research Society 1997

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