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Ordering in GaxIn1−xAsyP1−y Detected by Diffraction Methods

Published online by Cambridge University Press:  10 February 2011

I. Rechenberg ,
A. Oster ,
A. Knauer ,
U. Richter ,
J. Menniger  and
M. Weyers
I. Rechenberg
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Germany, rechenbg @ fbh.fta-berlin.de
A. Oster
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Germany, rechenbg @ fbh.fta-berlin.de
A. Knauer
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Germany, rechenbg @ fbh.fta-berlin.de
U. Richter
Affiliation:
Labor für Elektronenmikroskopie e.V., Weinbergweg 23, D-06120 Halle/Saale, Germany
J. Menniger
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5, D-10117 Berlin, Germany
M. Weyers
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Germany, rechenbg @ fbh.fta-berlin.de
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Abstract

Ga0.54In0.46As0.12P0.88 lattice matched to GaAs and grown by metal organic vapor phase epitaxy (MOVPE) shows an anomalous temperature behaviour of its cathodoluminescence (CL) emission. Using high resolution x-ray diffraction (HRXRD) and transmission electron diffraction (TED), ordering in this quarternary alloy can be identified as the reason for this behaviour. The ordering follows the same trends with respect to misorientation that are known for InGaP. In addition to ordering, compositional fluctuations related to a miscibility gap are found in this material. In contrast, layers with a higher As-content (y=0.5; y=0.76) do not show properties related to ordering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 49
Copyright
Copyright © Materials Research Society 1996

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