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Ordinary and Extra-Ordinary Dielectric Function of 4h- and 6H-SiC in the 0.7 to 9.0 eV Photon Energy Range

  • O. P. A Lindquist (a1), K. Järrendahl (a1), H. Arwin (a1), S. Peters (a2), J.-T. Zettler (a3), C. Cobet (a3), N. Esser (a3), D. E. Aspnes (a4), A. Henry (a1) and N. V. Edwards (a1)...

Abstract

We report ordinary <ε> and extra-ordinary <ε> dielectric function data of 4H- and 6H-SiC from 0.7 to 9.0 eV. These data, which were obtained by with spectroscopic ellipsometry, are in good qualitative agreement with trends recently reported in ab initio calculations.

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1. Ninomiya, S. and Adachi, S., Jpn. J. Appl. Phys. 33, 2479 (1994)
2. Zollner, S., Chen, J.G., Duda, E., Wetteroth, T., Wilson, S.R. and Hilfiker, J.N., J. Appl. Phys. 85, 8353 (1999).
3. Cobet, C., Wilmers, K., Wethkamp, T., Edwards, N.V., Esser, N. and Richter, W., Thin Solid Films, 364, 111 (2000).
4. Logothetidis, S. and Petalas, J., J. Appl. Phys., 80, 1768 (1996).
5. The n-type samples were commercially obtained from ATMI /Epitronics. Qualifying measurements were made with similar samples from Cree Research. No significant differences were observed in analogous spectra.
6. Adolph, B., Tenelsen, K., Gavrilenko, V. I. and Bechstedt, F., Phys. Rev. B 52, 1422 (1997).
7. Lambrecht, W.R.L., Limpijumnong, S., Rashkeev, S.N., Segall, B., Phys. Status Solidi B 202, 5 (1997).
8. Aspnes, D.E., in Optical Properties of Solids: New Developments, ed. Seraphin, B.O. (North-Holland, Amsterdam, 1976), p. 799.
9. The correction was performed for the 6H data only. Stray light effects are very pronounced in the relatively broader 6H spectra; thus they are more readily isolated and corrected in these cases. Corrections to the 4H data are accordingly more complex and will be discussed in more detail elsewhere.
10. Aspnes, D. E., Thin Solid Films, 233, 1 (1993) and references therein.
11. SiO2 thicknesses were comparable to those obtained by removing contaminant/ oxide overlayers in real-time with wet chemical treatments (∼15Å with concentrated Hydroflouric acid) from (0001) and (0001) 4H-SiC surfaces. Cf. Edwards, N.V., Järrendahl, K., Robbie, K., Powell, G., Aspnes, D. E., Cobet, C., Esser, N., Richter, W. and Madsen, L.D. et al. in manuscript.
13. Aspnes, D.E., Surf. Sci. 135, 286 (1983).
14. Järrendahl, K. and Davis, R. F. in SiC Materials and Devices, Semiconductors and semimetals, 52, ed. Park, Yoon Soo, (Academic Press, San Diego, 1998), p. 1.
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  • ISSN: -
  • EISSN: 1946-4274
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