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Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity

Published online by Cambridge University Press:  10 February 2011

D. Imafuku ,
W. Mizubayashi ,
S. Miyazaki ,
M. Hirose ,
Y. Wakayama  and
S. Kobayashi
D. Imafuku
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
W. Mizubayashi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
Y. Wakayama
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
S. Kobayashi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
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Abstract

Organic adsorbates on silicon wafer surfaces exposed to superclean room air were measured to evaluate organic contamination level of silicon wafers stored in a clean bench up to 180min. Such Si wafers were thermally oxidized and the dielectric degradation behavior were systematically investigated. It is found that a carbon contamination level of half a monolayer influences the charge to quasi-breakdown although the degradation mechanism itself remains unchanged.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 161
Copyright
Copyright © Materials Research Society 1997

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References

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