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Organic Contamination of Silicon Wafer in Clean Room Air and its Impact to Gate Oxide Integrity

  • D. Imafuku (a1), W. Mizubayashi (a1), S. Miyazaki (a1), M. Hirose (a1), Y. Wakayama (a1) (a2) and S. Kobayashi (a1) (a2)...
Abstract
ABSTRACT

Organic adsorbates on silicon wafer surfaces exposed to superclean room air were measured to evaluate organic contamination level of silicon wafers stored in a clean bench up to 180min. Such Si wafers were thermally oxidized and the dielectric degradation behavior were systematically investigated. It is found that a carbon contamination level of half a monolayer influences the charge to quasi-breakdown although the degradation mechanism itself remains unchanged.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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