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Origin of Grown-in Dislocations in III-V Compound Semiconductor Epitaxial Layers

  • S. Nakahara (a1) and S. N. G. Chu (a1)


A transmission electron microscope was used to study the origin of grown-in dislocations observed in quaternary InGaAsP layers grown by vapor phase epitaxy on (001) InP substrates. Many of the grown-in dislocations were found to exist as dislocation dipoles and were connected to particles formed at the lnGaAsP/lnP interface. X-ray micro-analysis has indicated that the particles are quaternary alloys having chemical compositions slightly richer in both Ga and P than that of the lattice-matched InGaAsP layer. In some cases, this compositional deviation led to a significant lattice mismatch. As the particle grows larger, a strain relaxation occurs by generating misfit dislocations around the particle in the form of a dislocation half loop. If these dislocation half loops do not develop into a complete loop by totally surrounding the particle, they leave two unclosed dislocation segments (a dislocation dipole), which are replicated by the quaternary overlayer along the substrate normal direction, i.e., [001]. These dislocations eventually become a source for grown-in dislocations.



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[1] Chu, S. N. G., Nakahara, S., Karlicek, R. F., Strege, K. E., Mitcham, D., and Johnston, W. D. Jr., J. Appl. Phys. 59, 3441 (1986).
[2] Chu, S. N. G. and Sheng, T. T., J. Electrochem. Soc. 131, 2663 (1984).
[3] Nakahara, S., Chu, S. N. G., and Stall, R. A., Phil. Mag. 53, 403 (1986).
[4] Nahory, R. E., Pollack, M. A., Johnston, W. D. Jr., and Barns, R. L., Appl. Phys. Lett. 33, 559 (1978).
[5] Nakahara, S., Chu, S. N. G., Karlicek, R. F., Strege, K. E., Mitcham, D., and Johnston, W. D. Jr., Unpublished Results (1985).


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