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Oxygen Precipitation Studies for N-Type and Epitaxial Silicon Substrates During Simulated Cmos Cycles by Synchrotron Section Topography

Published online by Cambridge University Press:  28 February 2011

T. Tuomi ,
S. Hahn ,
M. Tilli ,
C.-C. D. Wong  and
O. Borland
T. Tuomi
Affiliation:
Laboratory of Physics, Helsinki University of Technology, SF-02150 Espoo, Finland
S. Hahn
Affiliation:
Siltec Silicon, Mountain View, CA 94043
M. Tilli
Affiliation:
Laboratory of Physical Metallurgy, Helsinki University of Technology, SF-02150 Espoo, Finland
C.-C. D. Wong
Affiliation:
Integrated Device Technology, Inc., Santa Clara, CA 95054
O. Borland
Affiliation:
Applied Materials, Inc., Santa Clara, CA 95054
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Abstract

Synchrotron section topography is applied to the study of silicon wafers pulled out froma simulated advanced CMOS twin-tub process. Substrates are heavily doped with antimony and phosphorus. For comparison also high-resistivity samples are studied. Prior to epi deposition of arsenic doped layers some wafers are subjected to a three-step intrinsic gettering cycle.

Section topographs show that in the lightly doped samples a denuded zone is formed by the CMOS process itself in contrast with the heavily doped ones in which the intrinsic gettering is needed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 47
Copyright
Copyright © Materials Research Society 1986

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References

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