Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-23T14:54:35.876Z Has data issue: false hasContentIssue false
  • English
  • Français

Parameter Extraction from the Reverse I-V and C-V Characteristics of an Epitaxial p-InP/Au Schottky Diode

Published online by Cambridge University Press:  21 February 2011

A. Singh ,
P. Cova  and
R. A. Masut
A. Singh
Affiliation:
Universidad de Oriente, Departamento de Física, Laboratorio de semiconductores, Apartado 188, Cumaná 6101, Sucre, Venezuela
P. Cova
Affiliation:
Universidad de Oriente, Departamento de Física, Laboratorio de semiconductores, Apartado 188, Cumaná 6101, Sucre, Venezuela
R. A. Masut
Affiliation:
École Polytechnique de Montréal, Département de génie physique, C.P. 6079, Station "Centre-Ville", Montréal (Québec), H3C 3A7, Canada
Get access

Abstract

Epitaxial p-InP/Au Schottky diodes were fabricated by evaporation of Au onto Zn doped epitaxial layers of InP grown by MOVPE, on a highly doped InP substrate. The reverse current-voltage (Ir-Vr) and 1 MHz capacitance-voltage (C-V) characteristics of the Au/p-InP diodes were measured in the temperature range 220-393 K. At all temperatures, soft reverse current-voltage characteristics were observed, which may be due to the decrease in the effective Schottky barrier height (øbr) with the increase of Vr. The voltage dependence of the reverse current was well described in terms of the interface layer thermionic emission (ITE) model which incorporates the effects of applied reverse voltage drop and the transmission coefficient across the interface layer and image force lowering of the barrier height into the thermionic emission theory. A self consistent iteration and least square fitting technique was used to obtain the zero bias barrier height (øbo) and interface layer capacitance (Ci) from the Ir-Vr data. Both, the Ir-Vr and the C-V data were analyzed under the assumption of reverse bias voltage independence of the charge trapped in the interface states, which was supported by our experimental data. The values of øbo obtained from the C-V measurements agreed well with those obtained from the Ir-Vr data for a value of 0.45 AK−2cm−2 for the effective Richardson constant (Aeff).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 135
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Song, Y. P., Van Meirhaeghe, R. L., Laflere, W.H., and Cardon, F., Solid-State Electron. 29, 633 (1986).CrossRefGoogle Scholar
2 Singh, A., Reinhardt, K. C. and Anderson, W. A. J. Appl. Phys. 71, 4788 (1992).CrossRefGoogle Scholar
3 Cova, P., Ph. D. Thesis, Ecole Polytechnique of Montreal, 1992.Google Scholar
4 Rhoderic, E. H., Metal-Semiconductor Contacts (Clarendon, Oxford, 1988), p. 36 and 145.Google Scholar
5 Brillson, L. J., Surface Sci. Rep. 2, 2 (1982).CrossRefGoogle Scholar
6 Chekir, F., Lu, G. N. and Barret, C., Solid-St. Electron. 29, 519 (1986).CrossRefGoogle Scholar
7 L Chin, V. W., Green, M.A. and V Storey, J. W., Solid-St. Electron. 33, 299 (1990).CrossRefGoogle Scholar
8 Osvald, J., Solid-St. Electron. 35, 1629 (1992).CrossRefGoogle Scholar
9 Wu, C. Y., J. Appl. Phys. 51, 3786 (1980).CrossRefGoogle Scholar
10 Tseng, H. H. Wu, C.Y., J. Appl. Phys. 61, 299 (1987).CrossRefGoogle Scholar
11 Hattori, K., Yuito, M. and T, Amakusa, Phys. Stat. Solidi, A73, 157, (1982).CrossRefGoogle Scholar
12 Singh, A., Solid-State Electron. 28, 223 (1985).CrossRefGoogle Scholar
13 Singh, A., Cova, P. and Masut, R. A. (submitted for publication to J. Appl. Phys.).Google Scholar