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Pattern Formation via a Two-Step Faceting Transition on Vicinal Si(111) Surfaces

Published online by Cambridge University Press:  17 March 2011

F.K. Men
Affiliation:
Department of Physics, National Chung Cheng University, Chia-Yi, Taiwan, ROC
Feng Liu
Affiliation:
Department of Materials Science, University of Utah, Salt Lake City, UT 84112
P.J. Wang
Affiliation:
Department of Physics, National Chung Cheng University, Chia-Yi, Taiwan, ROC
C.H. Chen
Affiliation:
Department of Physics, National Chung Cheng University, Chia-Yi, Taiwan, ROC
D.L. Cheng
Affiliation:
Department of Physics, National Chung Cheng University, Chia-Yi, Taiwan, ROC
J.L. Lin
Affiliation:
Department of Physics, University of Wisconsin, Madison, WI 53705
F.J. Himpsel
Affiliation:
Department of Physics, University of Wisconsin, Madison, WI 53705
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Abstract

We demonstrate a self-organized pattern formation on vicinal Si(111) surfaces that are miscut toward the [211] direction. All the patterns, consisting of a periodic array of alternating (7×7) reconstructed terraces and step-bunched facets, have the same periodicity and facet structure, independent of the miscut angle; while the width of the facets increases linearly with miscut angle. We attribute such unique pattern formation to a surface faceting transition that involves two transition steps: the first step forms a stress-domain structure defining the universal periodicity; the second step forms the low-energy facets controlling the facet width.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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