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PbZr0.53Ti0.47O3 (PZT) Thin Films on La0.5Sr0.5CoO3 (LSCO) Bottom Electrodes Prepared by Chemical Solution Deposition and Annealed at Different Temperatures

Published online by Cambridge University Press:  11 February 2011

Barbara Malic
Affiliation:
Jozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
Sasa Javoric
Affiliation:
Jozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
Marija Kosec
Affiliation:
Jozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
Ricardo Jiménez
Affiliation:
Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
Carlos Alemany
Affiliation:
Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
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Abstract

PbZr0.53Ti0.47O3 (PZT) films on La0.5Sr0.5CoO3 (LSCO) /Pt electrodes crystallize in the perovskite phase at 550°C. Cross section SEM shows a columnar grain structure of PZT films on fine-grained LSCO. The ferroelectric response of the heterostructures depends on the annealing temperature of the LSCO layer. The remanent polarization and coercive field of the PZT annealed at 550 °C deposited on LSCO annealed at 800 °C are 25 μC/cm2 and 99 kV/cm respectively, comparable to the values obtained for PZT films on platinized silicon substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Ramesh, R., Dutta, B., Ravi, T.S., Lee, J., Sands, T., and Keramidas, V.G., Appl. Phys. Lett. 64, 1588 (1994).Google Scholar
2. Aggarwal, S., Yang, B., and Ramesh, R., Thin Film Ferroelectric Materials and Devices, (Kluwer Academic Publishers, Boston, 1997) pp. 221241.Google Scholar
3. Wang, F., Uusimaki, A., and Leppavuori, S., Appl. Phys. Lett. 67 (12), 1692 (1995).Google Scholar
4. Kim, B. J., Lee, J., and Yoo, J.B., Thin Solid Films, 341, 13 (1999).Google Scholar
5. Javorič, S., Kosec, M., and Malie, B., Integrated Ferroelectrics 30, 309 (2000).Google Scholar
6. Javorič, S., Kosec, M., Malic, B. and Mandeljc, M. in MIDEMConf. 2001 Proc, edited by Smole, F., Topič, M., Šorli, I., (MIDEM, Ljubljana, 2001) pp. 341 – 346.Google Scholar
7. Malic, B., Kosec, M., Arčon, I., Kodre, A., Hiboux, S., and Muralt, P., Integrated Ferroelectrics 30, 81 (2000).Google Scholar
8. Jiménez, R., Alemany, C., Calzada, M. L., Gonzalez, A. and Ricote, J., Applied Physics A 75, 607 (2002).Google Scholar
9. Javorič, S., Kosec, M. and Malie, B. in MIDEM Conf. 2002 Proc, edited by Kosec, M., Belavič, D., Šorli, I., (MIDEM, Ljubljana, 2002) pp. 131 – 136.Google Scholar