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Performance of a MIS Type Pd-Cr/AlN/Si Hydrogen Sensor

Published online by Cambridge University Press:  01 February 2011

Linfeng Zhang
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
Ibrahim A. Al-Homoudi
Affiliation:
Department of Mechanical Engineering, Wayne State University, Detroit, MI 48202
H. Rahman
Affiliation:
Department of Chemical Engineering and Materials Science, Wayne State University, Detroit, MI 48202
Erik F. McCullen
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
Lajos Rimai
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
Ron J. Baird
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
Ratna Naik
Affiliation:
Department of Physics and Astronomy, Wayne State University, Detroit, MI 48202
Golam Newaz
Affiliation:
Department of Mechanical Engineering, Wayne State University, Detroit, MI 48202
Gregory W. Auner
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
K. Y. Simon Ng
Affiliation:
Department of Chemical Engineering and Materials Science, Wayne State University, Detroit, MI 48202
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Abstract

An MIS Hydrogen sensor with a Pd0.96Cr0.04/AlN/Si structure was fabricated, exhibiting the dynamic range considerably wider than that of analogous devices with pure Pd gates. A useful response could be obtained for Hydrogen concentrations as large as 50, 000 ppm. Although the response amplitude was much reduced at the lower concentrations, satisfactory signal to noise down to 50 ppm could be obtained. The saturating magnitude of the electrical response is in the range of 0.1 to 0.5 V, which is the same as that for the pure Pd gated devices, inspite of the 3 orders of magnitude difference in the saturation hydrogen concentration. This result will be discussed in terms of the response mechanism of these devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCE

[1] Serina, F., Huang, C., Auner, G. W., Naik, R., Ng, K. Y. S., and Rimai, L., Pd/AlN/Si or SiC Structure for Hydrogen Sensing Device, Material Research Society Symposium, 622 (2001) T1.3.1–T1.3.6.Google Scholar
[2] McCullen, E.F., Mo, W., Haripriya, E.P., Rimai, L., Naik, R., Ng, K.Y.S., and Auner, G.W., Palladium/Aluminum gate metal/insulator/Silicon balanced capacitors for selective Hydrogen sensing, Material Research Society Symposium, 693 (2002)Google Scholar
[3] McCullen, E.F., Mo, W., Haripriya, E.P., Rimai, L., Naik, R., Ng, K.Y.S., and Auner, G.W., Electrical characterization of metal/AlN/Si thin film hydrogen sensors with Pd and Al gates, J. Appl. Phys. 93 (2003) 57575762.Google Scholar
[4] Eriksson, M., Olsson, L., Helmersson, U., Erlandsson, R., Ekedahl, L. G., Morphology changes of thin Pd films grown on SiO2: influence of adsorbates and temperature, Thin Solid Films 342 (1999) 297306.Google Scholar
[5] Erlandsson, R., Eriksson, M., Olsson, L., Helmersson, U., Lundstrom, I., Petersson, L. G, Gas-induced restructuring of palladium model catalysts studied with atomic force microscopy, J. Vac. Sci. Technol. 9 (1991) 825828.Google Scholar
[6] Serina, F., Huang, C., Auner, G. W., Naik, R., Ng, K. Y. S., and Rimai, L., Pd/AlN/SiC thin film devices for selective hydrogen sensing, Applied Physics Letter, 79(20), (2001) 33503352.Google Scholar