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Phosphorus / Silicon Interstitial Annealing After Ion Implantation

Published online by Cambridge University Press:  17 March 2011

P. H. Keys ,
R. Brindos ,
V. Krishnamoorthy ,
M. Puga-Lambers ,
K. S. Jones  and
M. E. Law
P. H. Keys
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL
R. Brindos
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL
V. Krishnamoorthy
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL
M. Puga-Lambers
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL
K. S. Jones
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL
M. E. Law
Affiliation:
Dept. of Electrical and Computer Engineering, University of Florida, Gainesville, FL
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Abstract

The release of interstitials from extended defects after ion implantation acts as a driving force behind transient enhanced diffusion (TED). Implantation of Si+ ions into regions of phosphorus-doped silicon provides experimental insight into the interaction of silicon interstitials and dopant atoms during primary damage annealing. The presence of phosphorus influences the morphology of secondary defects during initial nucleation. Transmission electron microscopy (TEM) is used to differentiate between defect types and quantify the interstitials trapped in extended defects. This analysis reveals that phosphorus results in a reduction of interstitials trapped in observable extended defects. The interstitial flux released from the implanted region is also affected by the phosphorus doping. This phenomenon is closely studied using secondary ion mass spectrometry (SIMS) to monitor diffusion enhancements of dopant layers. Shifts in diffused dopant profiles are correlated with the different morphologies of the extended defects and the decay of the silicon interstitial supersaturation. This correlation is used to understand the interaction of excess silicon interstitials with phosphorus atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B6.6
Copyright
Copyright © Materials Research Society 2000

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