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Photoluminescence Characterisation of Ion Implanted CdTe

Published online by Cambridge University Press:  21 March 2011

D. P. Halliday ,
M. D. G. Potter ,
D. S. Boyle  and
K. Durose
D. P. Halliday
Affiliation:
University of Durham, Department of Physics, South Road, Durham, DH1 3LE, United Kingdom
M. D. G. Potter
Affiliation:
University of Durham, Department of Physics, South Road, Durham, DH1 3LE, United Kingdom
D. S. Boyle
Affiliation:
University of Durham, Department of Physics, South Road, Durham, DH1 3LE, United Kingdom
K. Durose
Affiliation:
University of Durham, Department of Physics, South Road, Durham, DH1 3LE, United Kingdom
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Abstract

We have ion implanted a series of dopants into single crystal CdTe. The influence of the impurities on the CdTe has been studied by low temperature photoluminescence spectroscopy. The impurities studied are: O, Cl, Cu, S, Na and Sb, and were selected because of their potential importance in thin film CdTe/CdS photovoltaic devices. Each impurity was implanted to give a smooth gaussian distribution in the first few microns of material with a doping density of 1×1015cm−3. Low temperature photoluminescence spectra were recorded from each sample and compared with an undoped sample. The PL features observed in each sample are discussed and the data is compared to an earlier photoluminescence study of thin film CdTe/CdS photovoltaic device structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H1.8
Copyright
Copyright © Materials Research Society 2001

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References

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