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Photoluminescence of ZnSe Epilayers on GaAs Under Hydrostatic Pressure

Published online by Cambridge University Press:  21 February 2011

Judah A. Tuchman ,
Zhifeng Sui ,
Irving P. Herman ,
R. L. Gunshor ,
L. A. Kolodziejski ,
D. A. Cammack  and
M. Shone
Judah A. Tuchman
Affiliation:
Department of Applied Physics, Columbia University, New York, NY 10027
Zhifeng Sui
Affiliation:
Department of Applied Physics, Columbia University, New York, NY 10027
Irving P. Herman
Affiliation:
Department of Applied Physics, Columbia University, New York, NY 10027
R. L. Gunshor
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907
L. A. Kolodziejski
Affiliation:
Department of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
D. A. Cammack
Affiliation:
North American Philips Corporation, Briarcliff Manor, NY 10510
M. Shone
Affiliation:
North American Philips Corporation, Briarcliff Manor, NY 10510
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Abstract

The near bandgap photoluminescence of ZnSe epilayers grown on GaAs substrates is measured for pressures up to ∼25 kbar using a diamond anvil cell at T = 9 K. The bandgap changes with pressure, dE/dp, for pseudomorphic and nonpseudomorphic films are obtained, and are compared with results for bulk crystalline ZnSe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 471
Copyright
Copyright © Materials Research Society 1990

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References

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