Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-17T17:22:47.987Z Has data issue: false hasContentIssue false
  • English
  • Français

Photovoltaic applications of micro- and nano-crystalline silicon carbide

Published online by Cambridge University Press:  18 August 2011

A. Konopka ,
S. Greulich-Weber ,
E. Rauls ,
W.G. Schmidt  and
U. Gerstmann
A. Konopka
Affiliation:
Department of Physics, University of Paderborn, Paderborn, Germany.
S. Greulich-Weber
Affiliation:
Department of Physics, University of Paderborn, Paderborn, Germany.
E. Rauls
Affiliation:
Department of Physics, University of Paderborn, Paderborn, Germany.
W.G. Schmidt
Affiliation:
Department of Physics, University of Paderborn, Paderborn, Germany.
U. Gerstmann
Affiliation:
Department of Physics, University of Paderborn, Paderborn, Germany.
Get access

Abstract

One of the challenges on the way to optimized solar cells is to make the thickness of the individual layers smaller than the diffusion length of the charge carriers. In this work, we propose 3C-SiC microcrystals grown by a sol-gel based process as a promising acceptor material for photovoltaic applications. The μc-SiC samples were characterized by optical spectroscopy and electron paramagnetic resonance (EPR). The experimental data is analyzed with the help of ab-inito calculations in the framework of density functional theory (DFT) resulting in electronic band structures and g-tensors. Based on this, a possible scenario for the observed acceptor process is discussed.

Keywords

electron spin resonancephotovoltaicsol-gel
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1322: Symposium B – Third-Generation and Emerging Solar-Cell Technologies , 2011 , mrss11-1322-b10-02
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Saricifti, N.S., Smilowitz, L., Heeger, A.J., Wudl, F., Science 258, 1474 (1992).Google Scholar
[2] Brabec, C.J., Zerza, G., Cerullo, G., De Silvestri, S., Luzatti, S., Hummelen, J.C., Saricifti, N.S., Chem. Phys. Lett. 340, 232 (2001).Google Scholar
[3] Yu, G., Gao, J., Hummelen, J.C., Wudl, F., Heeger, A.J., Science 270, 1789 (1995).Google Scholar
[4] Fan, Q., McQuillin, B., Bradley, D.D.C., Whitelegg, S., Seddon, A.B., Chem. Phys. Lett. 347, 325–330 (2001).Google Scholar
[5] Cole, J.J., Wang, X., Knuesel, R.J., and Jacobs, H.O., Nano Lett., 8, 1477–1481 (2008).Google Scholar
[6] Ogawa, S., Appl. Phys. 46, 518–522 (2007).Google Scholar
[7] Son, N. T., Wagner, Mt., Hemmingsson, C. G., Storasta, L., Magnusson, B., Chen, W. M., Greulich-Weber, S., Spaeth, J. - M., and Janzén, E., in Silicon Carbide, Recent Major Advancs, Eds. Choyke, W. J., Matsunami, H., Pensel, G., Springer Berlin, Heidelberg 2004, 461–492, ISBN 3-540-40458-9 Google Scholar
[8] Giannozzi, P. et al. , J. Phys.:Condens Matter 21, 395502 (2009);http://www.quantum-espresso.org.Google Scholar
[9] Pickard, Ch.J. and Mauri, F., Phys. Rev. B 63, 245101 (2001)Google Scholar
[10] Pickard, Ch.J. and Mauri, F., Phys. Rev. Lett. 88, 086403 (2009)Google Scholar
[11] Gerstmann, U., Rohrmüller, M., Mauri, F., and Schmidt, W.G., phys. stat. sol.c) 7, 157 (2010)Google Scholar
[12] Yu, V.. Aristov, phys. usp. 44, 761 (2001)Google Scholar
[13] Lu, Wenchang, Schmidt, W.G., Briggs, E.L., and Bernholc, J., Phys. Rev. Lett. 85, 4381–4384 (2000)Google Scholar