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Photovoltaic Infrared Devices in Epitaxial Narrow Gap Lead Chalcogenides on Silicon Substrates

Published online by Cambridge University Press:  25 February 2011

H. Zogg ,
C. Maissen ,
J. Masek ,
T. Hoshino  and
S. Blunier
H. Zogg
Affiliation:
AFIF (Arbeitsgemeinschaft für Industrielle Forschung) at Swiss Federal Institute of Technology, ETH Hönggerberg, CH-8093 Zürich, Switzerland
C. Maissen
Affiliation:
AFIF (Arbeitsgemeinschaft für Industrielle Forschung) at Swiss Federal Institute of Technology, ETH Hönggerberg, CH-8093 Zürich, Switzerland
J. Masek
Affiliation:
AFIF (Arbeitsgemeinschaft für Industrielle Forschung) at Swiss Federal Institute of Technology, ETH Hönggerberg, CH-8093 Zürich, Switzerland
T. Hoshino
Affiliation:
AFIF (Arbeitsgemeinschaft für Industrielle Forschung) at Swiss Federal Institute of Technology, ETH Hönggerberg, CH-8093 Zürich, Switzerland
S. Blunier
Affiliation:
AFIF (Arbeitsgemeinschaft für Industrielle Forschung) at Swiss Federal Institute of Technology, ETH Hönggerberg, CH-8093 Zürich, Switzerland
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Abstract

We review MBE growth of epitaxial IV-VI layers on Si(111) substrates and fabrication of photovoltaic infrared devices in the layers. Cut-off wavelengths are chemically tailored from 3 µm up to above 12 µm by using PbS, PbTe, Pb1−xEuxSe and Pb1−xSnxSe. An intermediate epitaxial stacked CaF2-BaF2 bilayer of 200 nm thickness serves to overcome the large lattice- and thermal expansion mismatch, and device quality IV-VI layers are obtained with layer thicknesses of only 2–4 µm. The layers are untwinned single crystal, exhibit perfectly smooth surfaces with surface defect concentrations down to 103 cm−2, and x-ray rocking curve line-width of ≈150 arcsec. Despite the large thermal expansion mismatch, the (111)-oriented layers withstand multiple cooling cycles down to 15K without problems.

Although our IR-device fabrication technique is far from optimized, the sensitivities of our best photovoltaic sensors are comparable to MCT. IV-VI on Si IR sensors have the potential for a low cost technique of large IR focal plane arrays both for the 3–5 µm and 8–12 µm range because of the easy fabrication procedure and because uniformity problems are much less severe in IV-Vls due to the weaker dependence of the band-gap of Pb1−xSnxSe on composition x compared to MCT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 373
Copyright
Copyright © Materials Research Society 1991

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References

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