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Planar Laser-Induced Fluorescence Diagnostics of Pulsed Laser Ablation of Silicon

Published online by Cambridge University Press:  21 February 2011

D. G. Goodwin ,
D. L. Capewell  and
P. H. Paul
D. G. Goodwin
Affiliation:
Division of Engineering and applied Science, California institute of Technology, Pasadena, CA 91125
D. L. Capewell
Affiliation:
Division of Engineering and applied Science, California institute of Technology, Pasadena, CA 91125
P. H. Paul
Affiliation:
Combustion Research Facility, Sandia National Laboratories, Livermore, CA
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Abstract

Planar laser-induced fluorescence has been used to acquire time sequence images of ground-state, neutral Si and SiO during laser ablation of an Si target in vacuum and in the presence of a background gas at a fluence of 3-4 J/cm2. the SiO images, taken in air, strongly suggest that the observed SiO is created through reaction of silicon with oxygen at the contact front as the plume expands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 33
Copyright
Copyright © Materials Research Society 1995

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