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Planarization of Cu and Ta Using Silica and Alumina Abrasives - A Comparison

Published online by Cambridge University Press:  14 March 2011

Y. Li ,
S. Ramarajan ,
M. Hariharaputhiran ,
Y. S. Her  and
S.V. Babu
Y. Li
Affiliation:
Department of Mechanical, Clarkson University, Potsdam, NY 13699 Center for Advanced Materials ProcessingClarkson University, Potsdam, NY 13699
S. Ramarajan
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, NY 13699 Center for Advanced Materials ProcessingClarkson University, Potsdam, NY 13699
M. Hariharaputhiran
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, NY 13699 Center for Advanced Materials ProcessingClarkson University, Potsdam, NY 13699
Y. S. Her
Affiliation:
Ferro Corporation, Penn Yan, NY
S.V. Babu
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, NY 13699 Center for Advanced Materials ProcessingClarkson University, Potsdam, NY 13699
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Abstract

Experimental results on chemical mechanical polishing of copper and tantalum in the presence of different chemicals, such as Fe(NO3)3, H2O2 and glycine, using both silica and alumina abrasive particles are presented. The polish rates with alumina slurries vary in accordance with the hardness of the material being polished, suggesting a dominant role for a wear mechanism. However, polish rates with silica slurries do not relate directly to the hardness of the film, indicating a more complex removal mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 613: Symposium E – Chemical-Mechanical Polishing 2000 - Fundamentals… , 2000 , E2.4.1
Copyright
Copyright © Materials Research Society 2000

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References

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