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Plasma Chemistry Study of Plasma Ion Implantation Doping for Cmos Devices

Published online by Cambridge University Press:  10 February 2011

Shu Qin ,
Yuanzhong Zhou  and
Chung Chan
Shu Qin
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqi@neu.edu
Yuanzhong Zhou
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqi@neu.edu
Chung Chan
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqi@neu.edu
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Abstract

Plasma ion implantation (PII) doping processes utilizing PH3/He and B2H6/He plasmas to fabricate CMOS devices are presented. The impact of plasma chemistry of PH on device structure and characteristics are studied. By using an optimized process condition, low contamination levels and good device characteristics have been achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 239
Copyright
Copyright © Materials Research Society 1998

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