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Plasma Enhanced Metal-Organic Chemical Vapor Deposition of Germanium Nitride Thin Films

  • David M. Hoffman (a1), Sri Prakash Rangarajan (a1), Satish D. Athavale (a2), Demetre J. Economou (a2), Jia-Rui Liu (a3), Zongshuang Zheng (a3) and Wei-Kan Chu (a3)...
Abstract

Amorphous germanium nitride thin films are prepared by plasma enhanced chemical vapor deposition from tetrakis(dimethylamido)germanium, Ge(NMe2)4, and an ammonia plasma at substrate temperatures as low as 190°C with growth rates >250 Å/min. N/Ge ratios in the films are 1.3 and the hydrogen contents are 13 atom %. The hydrogen is present primarily as N-H. The refractive indexes are close to the bulk value of 2.1, and the band gap, estimated from transmission spectra, is 4.8 eV.

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