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Plasma Enhanced Metal-Organic Chemical Vapor Deposition of Germanium Nitride Thin Films

  • David M. Hoffman (a1), Sri Prakash Rangarajan (a1), Satish D. Athavale (a2), Demetre J. Economou (a2), Jia-Rui Liu (a3), Zongshuang Zheng (a3) and Wei-Kan Chu (a3)...

Amorphous germanium nitride thin films are prepared by plasma enhanced chemical vapor deposition from tetrakis(dimethylamido)germanium, Ge(NMe2)4, and an ammonia plasma at substrate temperatures as low as 190°C with growth rates >250 Å/min. N/Ge ratios in the films are 1.3 and the hydrogen contents are 13 atom %. The hydrogen is present primarily as N-H. The refractive indexes are close to the bulk value of 2.1, and the band gap, estimated from transmission spectra, is 4.8 eV.

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