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Precipitates Caused in Silicon Wafers by Prolonged High-Temperature Annealing in Nitrogen Atmosphere

Published online by Cambridge University Press:  17 March 2014

Haruo Nakazawa ,
Masaaki Ogino ,
Hideaki Teranishi ,
Yoshikazu Takahashi  and
Hitoshi Habuka
Haruo Nakazawa
Affiliation:
Corporate R&D Headquarters, Fuji Electric Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
Masaaki Ogino
Affiliation:
Corporate R&D Headquarters, Fuji Electric Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
Hideaki Teranishi
Affiliation:
Corporate R&D Headquarters, Fuji Electric Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
Yoshikazu Takahashi
Affiliation:
Corporate R&D Headquarters, Fuji Electric Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
Hitoshi Habuka
Affiliation:
Department of Chemical and Energy Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501, Japan.
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Abstract

The precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.

Keywords

Sicrystallinedefects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1591: Symposium H – Smart Materials Design for Ultimate Functional Materials: Functional Core Concept , 2014 , jsapmrs13-1591-6046
Copyright
Copyright © Materials Research Society 2014 

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References

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