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Predominance of Alternate Diffusion Mechanisms for the Interstitial-Substitutional Impurity Gold in Silicon

Published online by Cambridge University Press:  01 February 2011

Hui Li ,
Na Li ,
Subhash M. Joshi  and
Teh Y. Tan
Hui Li
Affiliation:
hl33@duke.edu, Duke University, Mechanical Engineering and Materials Science, Durham NC 27708, United States
Na Li
Affiliation:
nl15@duke.edu, Duke University, Mechanical Engineering and Materials Science, Durham, NC, 27708, United States
Subhash M. Joshi
Affiliation:
subhash.m.joshi@intel.com, Intel corporation, Hillsboro, OR, 97124, United States
Teh Y. Tan
Affiliation:
ttan@duke.edu, Duke University, Mechanical Engineering and Materials Science, Durham, NC, 27708, United States
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Abstract

It is well known that Au indiffusion in Si is dominated by the Kick-Out mechanism governed by Si self-interstitials, with negligible contribution from the Frank-Turnbull mechanism governed by vacancies. In this paper we present modeling and simulation results to show that the Frank-Turnbull mechanism actually dominates Au outdiffusion in Si.

Keywords

diffusionAusimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F02-05
Copyright
Copyright © Materials Research Society 2007

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