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Preparation of Lateral Organic Spin-valve Devices with La0.7Sr0.3MnO3

Published online by Cambridge University Press:  01 February 2011

Tomonori Ikegami ,
Iwao Kawayama ,
Masayoshi Tonouchi ,
Yoshiro Yamashita  and
Hirokazu Tada
Tomonori Ikegami
Affiliation:
ikegami@molectronics.jp, Osaka University, materials physics, Machikaneyamamati,1-3, Toyonaka, N/A, Japan
Iwao Kawayama
Affiliation:
kawayama@ile.osaka-u.ac.jp, Osaka University, Suita, N/A, Japan
Masayoshi Tonouchi
Affiliation:
tonouchi@ile.osaka-u.ac.jp, Osaka University, Suita, N/A, Japan
Yoshiro Yamashita
Affiliation:
yoshiro@echem.titech.ac.jp, Tokyo Institutes of Technology, Yokohama, N/A, Japan
Hirokazu Tada
Affiliation:
tada@mp.es.osaka-u.ac.jp, Osaka University, Toyonaka, N/A, Japan
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Abstract

Spin injection and transport characteristics of low-molecular-weight organic semiconductors such as pentacene and bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) have been studied utilizing lateral type spin-valve devices with half metal electrodes, LaA0.67Sr0.33MnO3 (LSMO). The LSMO electrodes with a spacing of 200 nm were prepared by electron-beam lithography and dry etching of the epitaxial films grown on MgO substrates. The devices showed clear spin-valve behaviors with a magneto-resistance (MR) ratio up to 29 % at 9.1K. It was found that the MR ratio depended on the crystallinity of organic films as well as on temperature and applied bias voltages

Keywords

spintronicorganicmagnetoresistance (transport)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1033: Symposium J – Spin-Injection and Spin-Transfer Devices , 2007 , 1033-J04-04
Copyright
Copyright © Materials Research Society 2008

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