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Properties of InGaN/GaN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 March 2011

M. G. Cheong ,
K. S. Kim ,
C. S. Kim ,
R. J. Choi ,
H. S. Yoon ,
S. W. Yu ,
Y. K. Hong ,
C.-H. Hong ,
E.-K. Suh  and
H. J. Lee
M. G. Cheong
Affiliation:
Semiconductor Physics Research Center (SPRC)Chonbuk National University, Chonju 561-756, KOREA
K. S. Kim
Affiliation:
Semiconductor Physics Research Center (SPRC)Chonbuk National University, Chonju 561-756, KOREA
C. S. Kim
Affiliation:
Semiconductor Physics Research Center (SPRC)Chonbuk National University, Chonju 561-756, KOREA
R. J. Choi
Affiliation:
Semiconductor Physics Research Center (SPRC)Chonbuk National University, Chonju 561-756, KOREA
H. S. Yoon
Affiliation:
Semiconductor Physics Research Center (SPRC)Chonbuk National University, Chonju 561-756, KOREA
S. W. Yu
Affiliation:
Semiconductor Physics Research Center (SPRC)Chonbuk National University, Chonju 561-756, KOREA
Y. K. Hong
Affiliation:
Semiconductor Physics Research Center (SPRC)Chonbuk National University, Chonju 561-756, KOREA
C.-H. Hong
Affiliation:
Semiconductor Physics Research Center (SPRC)Chonbuk National University, Chonju 561-756, KOREA
E.-K. Suh
Affiliation:
Semiconductor Physics Research Center (SPRC)Chonbuk National University, Chonju 561-756, KOREA
H. J. Lee
Affiliation:
Semiconductor Physics Research Center (SPRC)Chonbuk National University, Chonju 561-756, KOREA
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Abstract

Optical and structural properties of InGaN/GaN quantum wells having growth interruption were investigated using high-resolution x-ray diffraction, photoluminescence and transmission microscopy. InxGa1−xN/GaN (x>0.25) six pair quantum wells used in this study were grown on c- plane sapphire by metalorganic chemical vapor deposition. The growth interruption was carried out by closing the group-III metal organic sources before and after growth of InGaN quantum well layers. With increasing the interruption time, the quantum dot-like region and well thickness decreases due to indium re-evaporation or thermal etching effect. As a result, PL peak position is blue-shifted and intensity is reduced. The size and number of V-defect did not vary with interruption time. The interruption time is not directly related with formation of the defect. The V-defect in quantum wells originates at threading dislocations and inversion domain boundaries due to higher misfit strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O8.2
Copyright
Copyright © Materials Research Society 2001

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References

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