Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-25T08:31:26.352Z Has data issue: false hasContentIssue false

Proton Induced Structuring of a Photostructurable Glass

Published online by Cambridge University Press:  11 February 2011

Meg Abraham
Affiliation:
Oxford University, Material Department, Parks Rd. Oxford, UK
Inmaculada Gomez-Morilla
Affiliation:
Oxford University, Material Department, Parks Rd. Oxford, UK
Mike Marsh
Affiliation:
Oxford University, Material Department, Parks Rd. Oxford, UK
Geoff Grime
Affiliation:
University of Surrey, Physics Department, Guilford, UK
Get access

Abstract

The use of photons to create intricate three-dimensional and buried structures [1] in photo-structurable glass has been well demonstrated at several institutions [2]. In these instances the glass used whether it be Foturan™, made by the Schott Group or a similar product made by Corning Glass, forms a silver nucleation sites on exposure to intense UV laser light via a two-photon process. Subsequent annealing causes a localized crystal growth to form a meta-silicate phase which can be etched in dilute hydrofluoric acid at rates of 20 to 50 times that of the unprocessed glass. The same formulation of glass can be “exposed” using a particle beam to create the nucleation site. In the case of particle beam exposure, experiments have shown that the mechanisms that cause this initial nucleation and eventual stochiometric transformation, after annealing, depend largely on the beam energy.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hansen, W. W., Fuqua, P., Livingston, F., Huang, A., Abraham, M. H., Taylor, D. P., Janson, S., and Helvajian, H., The Industrial physicist, June/July, 18, (2002).Google Scholar
2. Stookey, S. D., Beall, G. H., and Pierson, J. E.. J. Appl. Phys., 49, 5114, (1978).Google Scholar
3. Fuqua, P. D., Taylor, D. P., Helvajian, H.; Hansen, W. W., Abraham, M. H. in Materials Development for Direct Write Technologies, edited by Christy, D., Ginley, D., Helvajian, H. and Taylor, D. P. (Mater. Res. Soc. Proc. 624, Warrendale, PA, 2000) pp. 7987.Google Scholar
4. Cheang-Wong, J. C., Oliver, A, Roiz, J., Rodriguez-Fernandez, L., Hernandez, J. M., and Crespo-Sosa, A., J. Phys.: Cond. Mat., 13, 10207, (2001).Google Scholar
5. Bettiol, A. A., Rajta, I., Teo, E. J., van Kan, J. A., and Watt, F., Nucl. Instrum. Meth., B 190, 154 (2002).Google Scholar
6. Grime, G. W., Dawson, M., Marsh, M., McArthur, I. C., and Watt, F., Nucl. Instrum. Meth., B 54, 52 (1991).Google Scholar
7. Grime, G. W. and Dawson, M., Nucl. Instrum. Meth., B 104, 107 (1995).Google Scholar