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Pt3In7 Ohmic Contacts to n-TYPE GaAs

Published online by Cambridge University Press:  25 February 2011

D. Swenson  and
Y. A. Chang
D. Swenson
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706
Y. A. Chang
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706
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Abstract

A thermodynamic and kinetic rationale was utilized to select Pt3In7 as an ohmic contact to n-GaAs. This analysis predicted that the contact metallurgy would be very simple and extremely uniform upon annealing. Preliminary electrical results showed that annealing samples at temperatures of 650 °C or higher led to ohmic behavior. A contact resistance of 3.4 × 10-5 Ω-cm2 was found upon annealing an uncapped contact at 750 °C for 15 s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 499
Copyright
Copyright © Materials Research Society 1992

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References

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