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P-Type II-VI Compound Semiconductor Thin Films Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  21 February 2011

W. P. Shen  and
H. S. Kwok
W. P. Shen
Affiliation:
Applied Laser Laboratory, State University of New York at Buffalo, amherst, NY 14260 * Current address: R&D Department, Photronics, inc., 1982 Tarob Ct., Milpitas, CA 95035.
H. S. Kwok
Affiliation:
Current address: Department of Electrical and Electronics Engineering, Hong Kong University of Science and Technology, Clearwater Bay, Hong Kong.
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Abstract

In this paper the results on p-type ZnS, ZnSe, CdS and CdSe thin films grown by pulsed laser deposition will be discussed. these films were deposited on GaAs substrates. Li-doping has been shown to be effective in producing p-type II-VI thin films, while in-doping is excellent for n-type CdS and CdSe thin films. No post-annealing process was used. these preliminary results suggest a possible new approach through pulsed laser deposition to solve the doping problem of II-VI compound semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 91
Copyright
Copyright © Materials Research Society 1995

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